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                                DMN6070SY-13
                                                                    Página inicial
                                                                    Semiconductors
                                                                    Discrete Semiconductors
                                                                    Transistors
                                                                    MOSFET

Diodes Incorporated

Fabricante:

Diodes Incorporated

Número da peça do fornecedor:

DMN6070SY-13

Pacote:

SOT-89-3

RoHS:
Ficha de dados:

DMN6070SY-13

Descrição:

Package/Enclosure : SOT-89-3

ECAD Model:
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Manufacturer Diodes Incorporated
Product Category MOSFET
Rds On - Drain-Source Resistance 70 mOhms
Rise Time 4.1 ns
Fall Time 11 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 2.1 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-89-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 12.3 nC
Technology Si
Id - Continuous Drain Current 4.1 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 3.5 ns
Subcategory MOSFETs
Manufacturer,Continuous Drain Current (Id) @ 25°C,Power Dissipation-Max (Ta=25°C),Current - Continuous Drain (Id) @ 25°C,Driven Configuration,Features,Gate Type,Logic Voltage - VIL, VIH,Current - Peak Output (Source, Sink),High Side Voltage - Max (Bootstrap),Channel Type,FET configuration,Drain-source breakdown voltage,Drain current,On Resistance - Max,Package,search for,漏极电流Id(连续)(Max),功率(Max),Type of installation,工作温度(Tj),FET类型,输入电容(Ciss)(Max),导通电阻Rds On(Max),IC(Max.)(A),VCE(sat)(Typ.),VCES,Pt,Package/Temperature,漏源极电压(Vdss),引线数量,安装类型,Package/Enclosure,是否无铅,特性,输出配置,Operating Supply Voltage,品牌,功率耗散,技术,供电电压,原始制造商,额定功率,阈值电压Vgs(th),输入类型,包装,印字代码,无卤,Number of Drivers,连续漏极电流Id@25℃,比率(输入:输出),存储温度,极性,输出端数,Maximum DC Collector Current,长x宽/尺寸,驱动电压(最大RdsOn,最小RdsOn),漏源击穿电压BVDSS,Input Type,封装/外壳,上升/下降时间,输出类型,DC正向电流(If),Collector-Emitter Breakdown Voltage,元件生命周期,系列,制造商标准提前期,漏极电流Idss,栅极源极击穿电压,输入电容Ciss,充电电量,接口,反向传输电容Crss,脚间距,开关类型,,工作温度,FET功能,Product Category,原产国家,输出电流,配置,Shipping Restrictions,栅极电荷(Qg)(Max),不同 Id,Vgs时的 RdsOn(最大值),湿气敏感性等级(MSL),故障保护,正向压降VF Max,最小包装,导通电阻,应用等级,Type,漏源电压(Vdss),高度,负载电压,Product,认证信息,Forward Transconductance - Min,零件状态,引脚数,晶体管类型,应用,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
Diodes Incorporated,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,,,,,,,,,,,,,,,,,,,,,70 mOhms,4.1 ns,11 ns,2.1 W,,MOSFET,1 Channel,,SOT-89-3,- 55 C,,,,N-Channel,1 N-Channel,20 V,1 V,12.3 nC,Si,4.1 A,60 V,35 ns,3.5 ns,MOSFETs,,,
718886
1148
/category/MOSFET_1148?proid=718886&N=
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